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STT200
Thyristor-Thyristor Modules
Dimensions in mm (1mm=0.0394") Type VRSM VDSM V 900 1300 1500 1700 1900 VRRM VDRM V 800 1200 1400 1600 1800
STT200GK08 STT200GK12 STT200GK14 STT200GK16 STT200GK18
Symbol ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine TVJ=45oC VR=0 ITSM, IFSM TVJ=TVJM VR=0
2
Test Conditions
Maximum Ratings 314 200
Unit A
t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine repetitive, IT=750A
8000 8500 7000 7600 38000 34000 30000 27000 250 800
A
i dt
TVJ=45oC VR=0 TVJ=TVJM VR=0
A2s
TVJ=TVJM f=50Hz, tp=200us (di/dt)cr VD=2/3VDRM IG=1A diG/dt=1A/us (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA
A/us
non repetitive, IT=200A 1000 120 60 20 10 -40...+130 125 -40...+130 t=1min t=1s 3000 3600 2.5-5/22-44 12-15/106-132 320 V/us W W V
o
TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) TVJ=TVJM IT=ITAVM tp=30us tp=500us
C
V~ Nm/lb.in. g
Mounting torque (M5) Terminal connection torque (M8) Typical including screws
STT200
Thyristor-Thyristor Modules
Symbol IRRM IDRM VT, VF VTO rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a per thyristor/diode; DC current per module per thyristor/diode; DC current per module Creeping distance on surface Strike distance through air Maximum allowable acceleration TVJ=25 C; tp=30us; VD=6V IG=0.45A; diG/dt=0.45A/us TVJ=25oC; VD=6V; RGK= TVJ=25 C; VD=1/2VDRM IG=1A; diG/dt=1A/us TVJ=TVJM; IT=300A; tp=200us; -di/dt=10A/us VR=100V; dv/dt=50V/us; VD=2/3VDRM TVJ=125oC; IT, IF=400A; -di/dt=50A/us typ.
o o
Test Conditions TVJ=TVJM; VR=VRRM; VD=VDRM IT, IF=600A; TVJ=25oC For power-loss calculations only (TVJ=140 C)
o o
Characteristic Values 70 40 1.50 0.95 1.0
Unit mA mA V V m V mA V mA mA mA us us uC A K/W K/W mm mm m/s2
VD=6V; VD=6V; TVJ=TVJM;
TVJ=25 C TVJ=-40oC TVJ=25oC TVJ=-40oC VD=2/3VDRM
2 3 150 200 0.25 10 300 150 2 200 760 275 0.140 0.070 0.180 0.090 12.7 9.6 50
FEATURES
* International standard package * Direct copper bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~
APPLICATIONS
* Motor control * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Contactless switches
ADVANTAGES
* Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits
STT200
Thyristor-Thyristor Modules
Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration
Fig. 2 i2t versus time (1-10 ms)
Fig. 2a Maximum forward current at case temperature
Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor or diode)
Fig. 4 Gate trigger characteristics
3 x STT200
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
Fig. 6 Gate trigger delay time
STT200
Thyristor-Thyristor Modules
Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature
3 x STT200
0.15 K/W 30 DC
Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d:
ZthJC
0.10
d DC 180oC 120oC 60oC 30oC
RthJC (K/W) 0.129 0.131 0.131 0.132 0.132
0.05
Constants for ZthJC calculation: i
0.00 10-3 10-2 10-1 100 101 s 102
Rthi (K/W) 0.0035 0.0165 0.1091
ti (s) 0.099 0.168 0.456
t
1 2 3
0.20 K/W 30 DC 0.15
ZthJK
Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: d RthJK (K/W) 0.169 0.171 0.172 0.172 0.173 DC 180oC 120oC 60oC 30oC
0.10
0.05
Constants for ZthJK calculation:
3 x STT200
i
100 101 s 102
Rthi (K/W) 0.0033 0.0159 0.1053 0.04
ti (s) 0.099 0.168 0.456 1.36
0.00 10-3
10-2
10-1
t
1 2 3 4

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